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SLIIT RDA
IEEE
Faculty of Engineering
Department of Materials Engineering : [1]
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Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si/sub 1-x/Ge/sub x/
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Author
1
Bonar, J. M
1
Dilliway, G. D
1
Hemment, P. L. F
1
Karunaratne, M. S. A
1
Mubarek, H.A.W.E
1
Wang, Y.
Subject
1
boron thermal diffusion
1
boron transient
1
Diffusion processes
1
Electron microscopy
1
Ion implantation
1
Mass spectroscopy
Date issued
1
2005
Has File(s)
1
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